Effect of EMI between Wireless Interconnects and Metal Interconnects on CMOS Digital Circuits

Wireless interconnects are built with two or more antennas on a semiconductor integrated circuit (IC) communicating with each other to form an intra-chip communication network. The wireless interconnects are considered a viable solution to the global communications problems faced by ICs. In this work, the effects of the electromagnetic coupling between the on-chip antennas for wireless interconnects and the metal interconnects for local communication are considered. The effects of the electromagnetic coupling on the complimentary metal oxide semiconductor (CMOS) digital circuits are presented. The electromagnetic compatibility and electromagnetic interference analysis is performed using a co-simulation methodology. In particular, 3D finite element method (FEM) based full-wave electromagnetic simulations are co-simulated with the radio frequency (RF) models of the devices on a circuit simulator. The presented simulation models are based on a contemporary 9metal layer 90 nm process technology.